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STMicroelectronics EVSTDRIVEG600DM Demonstration Board provides a Half-Bridge topology reference design pairing the STDRIVEG600 Gate Driver with an MDmesh™ DM2 Power MOSFET. The STDRIVEG600 is a single-chip half-bridge gate driver for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V.
The STMicroelectronics EVSTDRIVEG600DG Demonstration Board includes a pre-mounted STDRIVEG600 in a SO-16 package and an STL33N60DM2 115mΩ 600V MDmesh DM2 Power MOSFET in a PowerFLAT™ 8×8 HV package with Kelvin source. The Demonstration Board also features an onboard programmable dead time generator and a 3.3V linear voltage regulator to supply external logic controllers like microcontrollers.
Spare footprints are included to allow customizing the board for the final application, such as separate input signal or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC, or BOOT, and the use of low-side shunt resistor for peak current mode topologies.
