Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory)

Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory) is a non-volatile memory featuring fast writing speed operation, high read/write endurance, and low power consumption. These features make FRAM ideal for applications requiring continuous data logging, real-time recording of three-dimensional position information, and data protection from sudden power outages.

Fujitsu Semiconductor FRAM is offered in serial (SPI and I²C interfaces) and parallel (parallel interface) variants and in a wide range of compact, high-density package types. Memory size options are available from 4Kbit up to 8Mbit.

Features

Non-volatile
- Stored data is not lost at power off
- No battery is needed for data retention
Low power consumption
- No booster circuit is required for a write operation
- 92% lower write power consumption than EEPROM
- No data retention current required to retain data

High read/write cycle endurance
- Guarantees 10 trillion (10¹³) read/write cycles
- 10 million times of EEPROM’s endurance
Fast write speed
- Can overwrite data without an erase operation

Applications

IoT
Automotive
Industrial facility and infrastructure
Smart meters

Medical
Consumer
Enterprise
Networking

Application Examples

Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory)

Resources

Fujitsu Semiconductor FRAM/ReRAM Brochure
Fujitsu Semiconductor Memory Solution Profile

Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory)

Features

Applications

Application Examples

Resources

Videos

Package Options

Memory Options

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