STMicroelectronics EVSTGAP2SICSN/C Evaluation Boards

STMicroelectronics EVSTGAP2SICSN/C Evaluation Boards are engineered to evaluate the STGAP2SICSN isolated single gate driver. The STGAP2SICSNTR 4A Single Gate Driver provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.

The STM EVSTGAP2SICSN/C Boards permit evaluating all the STGAP2SICSN features while driving a half-bridge power stage with a voltage rating up to 520V. Increasing bus voltage is enabled by replacing the power switches with appropriate devices in an H2PACK-7L or H2PACK-2L package and the C29 capacitance if needed. The board components are easy to access and modify, making driver performance evaluation easier under different application conditions and fine adjustment of final application components.

Features

Board
- Half-bridge configuration, high voltage rail up to 520V
- SCT35N65: 650V, 55mΩ SiC MOSFET
- Negative gate driving
- On-board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5V, with 5.2kV maximum isolation
- 3.3V VDD logic supply generated on-board or 5 V (externally applied)
- +17/0V; +17/-3V; +19/0V; +19/-3V Easy jumper selection of driving voltage configuration

Device
- 4A source/sink @ 25°C Driver current capability
- Separate sink and source output for easy gate driving configuration
- 75ns Short propagation delay
- UVLO function
- Gate driving voltage up to 26V
- 3.3V, 5V TTL/CMOS inputs with hysteresis
- Temperature shutdown protection
- Standby function

STMicroelectronics EVSTGAP2SICSN/C Evaluation Boards

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