Micron 176-Layer NAND Universal Flash Storage (UFS) 3.1

Micron 176-Layer NAND Universal Flash Storage (UFS) 3.1 is a lighting-fast Flash memory solution based on 3D Replacement Gate technology, optimized for high-end and flagship phones. The 175-layer UFS 3.1 unlocks 5G’s potential with up to 75% faster sequential write and random read performance than the prior 96-layer generation, enabling downloads of two-hour 4K movies in as little as 9.6s. Micron 176-layer UFS 3.1 features a compact design ideal for the high capacity, small form factors required in mobile devices. Micron 176-layer NAND UFS 3.1 is offered in 128GB, 256GB, 512GB, 1TB, and 2TB capacities.

Features

Improved performance – 75% faster sequential write and 70% faster random read performance over previous 96-layer generation
Improved endurance of up to 2x the improved total bytes written vs. the previous 96-layer generation product
- Twice the total data can be stored without degrading device reliability

Faster downloads – ability to download a 10-minute 4K (2160 pixels) YouTube video stream in 0.7s or a two-hour 4K movie in 9.6s
Smoother mobile experience – 10% shorter latency than previous 96-layer generation for faster response times and a more reliable mobile experience

Applications

Mobile
Automotive
Clientele
Consumer

Data centers
Flash adoption in workloads such as data lakes, artificial intelligence, and big data analytics

Resources

Micron Press Release
3D NAND Replacement-Gate Technology Whitepaper

Micron 176-Layer NAND Universal Flash Storage (UFS) 3.1

Features

Applications

Resources

Videos

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