NXP Semiconductors RDGD31603PHSEVM VE-Trac™ Drive Reference Design

NXP Semiconductors RDGD31603PHSEVM VE-Trac™ Drive Reference Design demonstrates a three-phase inverter circuit based on six GD3160 Gate Drivers. The GD3160 is an advanced single-channel high-voltage isolated Gate Driver with enhanced features for driving and protecting Silicon Carbide (SiC) MOSFETs or IGBTs and functional safety. The RDGD3160I3PH5EVB supports SPI daisy chain communication for programming and communication with three high-side gate drivers and three low-side gate drivers independently. The Reference Design includes fault management and all supporting circuitry. Other supporting features on the board include desaturation short-circuit detection, IGBT/SiC temperature sensing, DC Link bus voltage monitoring, phase current sensing, and motor resolver excitation and signal processing connection circuitry.

The RDGD3160I3PH5EVB includes the FRDM-KL25Z Freedom Development Board for interfacing with a PC. The Flex GUI software needs to be installed on the PC, which communicates with the GD3160 via SPI registers, either in a daisy chain or standalone configuration. The FlexGUI software allows the user to configure the GD3160 devices without any software development and conduct short-circuit (SC) or double pulse tests (DPT) on a single phase.

The RDGD31603PHSEVM is designed to connect to a compatible footprint of an onsemi VE-Trac SiC Module (not included) or any other MOSFET Module with the same pinout. The Reference Design is also compatible with the MPC5775x-EVB Microcontroller Board (not included), allowing full motor control using the NXP software examples.

The NXP Semiconductors RDGD31603PHSEVM Reference design can be used as a foundation to develop a complete ASIL-D compliant, high voltage, high-power traction motor inverter for electric vehicles.

Features

Capability to perform SC and DPT tests on Phase U
Evaluation board designed for and populated with GD3160 Gate Drivers and protection circuitry
Capability to connect to Hybrid Drive SiC Modules for full three-phase evaluation and development
Daisy chain SPI communication (three high-side and three low-side gate drivers)
Variable fly-back V_CC power supply with GND reference and -3.9V VEE supply
Easy access to power, ground, and signal test points

32-pin PCIe socket for interfacing MCU control
Optional connection for DC bus voltage monitoring
Phase current feedback connections
Resolver signal connector
Key components
- GD3160 Automotive Gate Driver for SiC MOSFETs/IGBTs
- MPC5777C Power Architecture® Microcontroller
- FS6500 System Basis Chip
- TJA1042 High-Speed CAN Transceiver

Required Equipment

Microcontroller Board for SPI communication
- FRDM-KL25Z (included), MPC5777C-DEVB (not included), MPC5775x-EVB (not included) recommended
onsemi NVXR17S90M2SP VE-Trac SiC Module or other compatible MOSFET Module (not included)

Compatible DC link capacitor
HV power supply with protection shield and hearing protection
Current sensors for monitoring each phase current
12V, 1.0A DC power supply
4-channel oscilloscope with appropriate isolated probes

Software

The NXP Semiconductors RDGD31603PHSEVM Reference Design requires a Windows PC workstation with an available USB port and Windows 7, 10, or higher. The following software, available from NXP, is also required.