NXP Semiconductors RDGD3160I3PH5EVB HP Drive Reference Design demonstrates a three-phase inverter circuit based on six GD3160 Gate Drivers. The GD3160 is an advanced single-channel high-voltage isolated Gate Driver with enhanced features for driving and protecting Silicon Carbide (SiC) MOSFETs or IGBTs and functional safety. The RDGD3160I3PH5EVB supports SPI daisy chain communication for programming and communication with three high-side gate drivers and three low-side gate drivers independently. The Reference Design includes fault management and all supporting circuitry.
The RDGD3160I3PH5EVB is designed to connect to a compatible Infineon Technologies HybridPACK™ Drive SiC IGBT Module or an onsemi VE-trac™ IGBT Module for full three-phase inverter applications development. The Reference Design has low-voltage and high-voltage isolation in conjunction with gate drive integrated galvanic signal isolation. Other supporting features include desaturation short-circuit detection, IGBT temperature sensing, DC Link bus voltage monitoring, phase current sensing, and motor resolver excitation and signal processing connection circuitry.
The NXP Semiconductors RDGD3160I3PH5EVB Reference Design is intended for use with a microcontroller board for SPI communication with a Microsoft Windows-based PC.
The NXP Semiconductors RDGD3160I3PH5EVB Reference Design requires a Windows PC workstation with an available USB port and Windows 7, 10, or higher. The following software, available from NXP, is also required.