Intelligent Memory Double Data Rate 4 (DDR4) DRAM

Intelligent Memory Double Data Rate 4 (DDR4) DRAM contains higher module density, higher data transmission speeds, and lower voltage requirements than DDR3 devices. These devices support Data Bus Inversion (DBI), Write Cycle Redundancy Check (CRC), Dynamic ODT (On Die Termination), and Fine Granularity Refresh Mode. With high-speed data transfer up to 3200MHz, the Intelligent Memory DDR4 ICs are ideal for demanding applications in the industrial market.

Features

Double data rate clocking timing, 1.2V power supply
Supported Data Bus Inversion (DBI)
Supported Write Cycle Redundancy Check (CRC)
Supported Dynamic ODT (On Die Termination)

Supported Fine Granularity Refresh Mode
High-speed data transfer up to 3200MHz
4Gb and 8Gb densities available
RoHS compliant

Applications

Commercial
Industrial

Specifications

1Gx8 (16x banks x 64Mbit x 8) configuration
1333MHz or 1600MHz maximum speed options
2666Mbps or 3200Mbps data rate options
8-bit or 16-bit data bus width options
1.6GHz maximum clock frequency

1.2V supply voltage
Temperature ranges
- 0 to +95°C commercial
- -40°C to +95°C industrial
- -40°C to +105°C high

Intelligent Memory Double Data Rate 4 (DDR4) DRAM

Features

Applications

Specifications

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