STMicroelectronics EVSTGAP2GSN Demonstration Board

STMicroelectronics EVSTGAP2GSN Demonstration Board facilitates an extensive evaluation of the STGAP2GSN isolated single gate driver. The STGAP2GSN is specified by 2A source and 3A sink capability and rail-to-rail outputs, appropriate for mid- and high-power inverter applications. The device uses dedicated gate resistors to optimize turn-on and turn-off independently.

The STMicro EVSTGAP2GSN board allows evaluating all the STGAP2GSN features driving the SGT120R65AL 75mΩ, 650V e-Mode GaN transistors. The board components are easy to access and modify, making driver performance evaluation easier under different application conditions and fine adjustment of final components.

Features

Board
- Half bridge configuration, high voltage rail up to 650V
- SGT120R65AL with 650V, 75mΩ typ., 15A, e-mode PowerGaN transistor
- Negative gate driving
- On board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5V, with 1.5kV maximum isolation
- VDD logic supplied by onboard 3.3V or VAUX = 5V
- Easy jumper selection of driving voltage configuration: +6V/0V; +6V/-3V

Device
- 1700V functional isolation
- Driver current capability: 2A/3A source/sink at +25°C, VH = 6V
- Separate sink and source for easy gate-driving configuration
- 45ns Input-output propagation delay
- UVLO function optimized for GaN
- Gate driving voltage up to 15V
- 3.3V, 5V TTL/CMOS inputs with hysteresis
- Temperature shut-down protection

STMicroelectronics EVSTGAP2GSN Demonstration Board

Features

Component placement top

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