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STMicroelectronics EVSTDRIVEG60015 Demonstration Board allows users to evaluate the STDRIVEG600 high-speed half-bridge gate driver. The STDRIVEG600 is optimized to drive high voltage-enhanced mode GaN HEMTs. The device features an integrated bootstrap diode and supplies external switches up to 20V, with undervoltage protection tailored for GaN HEMTs.
The STMicro EVSTDRIVEG60015 board is easy to use and quick to adapt for evaluating the characteristics of STDRIVEG600 driving the SGT120R65AL 75mΩ typ., 650V E-Mode GaN switches. The board offers an onboard programmable dead time generator and a 3.3V linear voltage regulator to supply external logic controllers like microcontrollers.
Included spare footprints support customizing the board for the final application, such as separate LIN and HIN input signals or single PWM signal, use of optional external bootstrap diode, individual supply for VCC, PVCC, or BOOT, and the use of low-side shunt resistor for peak current mode topologies. The EVSTDRIVEG60015 is 50mm x 70mm wide, FR-4 PCB resulting in +25°C/W Rth(J‑A) in still air.
