ROHM Semiconductor 650V GaN HEMT Power Stage Evaluation Boards

ROHM Semiconductor 650V GaN HEMT Power Stage Evaluation Boards are used to evaluate the 650V GaN HEMT Power Stage ICs. The ROHM Semiconductor BM3G007MUV-EVK-003 board consists of the BM3G007MUV (GaN FET (650V 70mΩ), integrated driver and protection circuit) and a board on which peripheral components are mounted. The BM3G015MUV-EVK-003 evaluation board consists of the BM3G015MUV (GaN FET (650V 150mΩ), integrated driver and protection circuit) and a board on which peripheral components are mounted. The BM3G007MUV-EVK-002 reference board outputs 400V voltage from the input of 90Vac to 264Vac.

Features

BM3G007MUV-EVK-002
- Outputs 400V voltage from the input of 90Vac to 264Vac
- Output current supplies up to 0.6A
- Built-in GaN HEMT (650V 70mΩ), driver, and protection circuit
- GaN Power Stage achieved a maximum efficiency of 97.8%
- The BD7695FJ, which is BCM method PFC controller IC is used
- The BD7695FJ supplies the system which is suitable for all products that require PFC
- BCM is used for the PFC part, and Zero Current Detection reduces both switching loss and noise
- THD is 8.4% typical

BM3G015MUV-EVK-003
- Consists of the BM3G015MUV (GaN FET (650V 150mΩ), integrated driver and protection circuit) and a board on which peripheral components are mounted
- IC is designed to adapt major existing controllers so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET
BM3G007MUV-EVK-003
- Consists of the BM3G007MUV (GaN FET (650V 70mΩ), integrated driver and protection circuit) and a board on which peripheral components are mounted
- IC is designed to adapt major existing controllers so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET

ROHM Semiconductor 650V GaN HEMT Power Stage Evaluation Boards

Features

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