Wolfspeed C3M0025065L C3M™ Silicon Carbide Power MOSFET

Wolfspeed C3M0025065L C3M™ Silicon Carbide Power MOSFET offers reduced switching losses and gate ringing while optimizing system efficiency. The C3M0025065L implements 3rd generation SiC MOSFET technology in an enhanced package with a separate driver source pin. The Wolfspeed C3M0025065L MOSFET provides high-speed switching with low capacitances for data center and telecom power supplies.

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen-free and RoHS compliant

Applications

  • Datacenter power supplies
  • Telecom power supplies
  • Energy storage systems
  • Solar (PV) inverters
  • High voltage DC/DC converters

Specifications

  • 650V drain-source voltage
  • -8V/+19V gate-source voltage
  • 77A at TC = +25°C continuous drain current, VGS = 15V
  • 235A pulsed drain current
  • 326W power dissipation
  • -40°C to +175°C junction temperature range

Test Circuit Schematic

Application Circuit Diagram - Wolfspeed C3M0025065L C3M™ Silicon Carbide Power MOSFET

Dimensions mm

Mechanical Drawing - Wolfspeed C3M0025065L C3M™ Silicon Carbide Power MOSFET

Wolfspeed C3M0025065L C3M™ Silicon Carbide Power MOSFET