WeEn Semiconductors WNSC2D16650CJ and WNSC2D20650CJ Silicon Carbide (SiC) Schottky Diodes are 650V devices optimized for high-frequency switched-mode power supplies. SiC devices provide many advantages over silicon, including no reverse recovery current, temperature-independent switching, and excellent thermal performance. These features result in higher efficiency, faster-operating frequency, higher power density, lower EMI, and reduced system size and cost. These diodes feature extremely fast reverse recovery time, reduced losses in associated MOSFET, and low cooling requirements.
The WeEn Semiconductors WNSC2D16650CJ and WNSC2D20650CJ SiC Schottky Diodes are offered in a TO-3PF RoHS compliant package.