onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs

onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs are optimized for fast switching applications. The planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. The onsemi M3S 1200V MOSFETs provide optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The M3S offers low switching losses and is housed in a TO247-4LD package for low common source inductance.

Features

TO247-4LD package for low common source inductance
15V to 18V Gate drive
M3S technology of 22mohm R_DS(ON) with low EON and EOFF losses
100% Avalanche tested
Reduced EON losses

18V for best performance; 15V for compatibility with IGBT driver circuits
Improved power density
Improved robustness to unexpected incoming voltage spikes or ringing

Applications

AC-DC Conversion
DC-AC Conversion
DC-DC Conversion
UPS

Electric vehicle chargers
Solar inverters
Energy storage systems

Resources

Whitepaper: Introduction To onsemi M3S SiC MOSFET Technology

onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs

Features

Applications

Resources

Internal Circuit Diagram

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